1/10 april 2004 stb80ne06-10 n-channel 60v - 0.085 ? - 80a d2pak "single feature size?" power mosfet rev.2 table 1. general features features summary typical r ds(on) = 0.085 ? exceptional dv/dt capability 100% avalanche tested application oriented characterization for through-hole version contact sales office description this mosfet is the late st development of stmi- croelectronics unique "single feature size ? " strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications solenoid and relay drivers motor control, audio amplifiers dc-dc converters automotive environment figure 1. package figure 2. internal schematic diagram table 2. order codes type v dss r ds(on) i d stb80ne06-10 60 v < 0.01 ? 80 a 1 3 to-263 d 2 pak (suffix ?t4?) part number marking package packaging STB80NE06-10T4 b80ne06 d 2 pak tape & reel obsolete product(s) - obsolete product(s)
stb80ne06-10 2/10 table 3. absolute maximum ratings note: 1. pulse width limited by safe operating area 2. i sd 80 a, di/dt 300 a/ s, v dd v (br)dss , t j t jmax table 4. thermal data table 5. avalanche characteristics symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k ? )60v v gs gate-source voltage 20 v i d drain current (cont.) at t c = 25 c 80 a i d drain current (cont.) at t c = 100 c 57 a i dm (1) drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 150 w derating factor 1 w/c dv/dt (2) peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 c t j max. operating junction temperature 175 c symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetit ive or not-repetitive (pulse width limited by t j max, < 1%) 80 a e as single pulse avalanche energy (starting t j = 25 c; i d = i ar ; v dd = 30 v) 250 mj obsolete product(s) - obsolete product(s)
3/10 stb80ne06-10 electrical characteristics (t case = 25c unless otherwise specified) table 6. off table 7. on (1) note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % table 8. dynamic note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % table 9. switching on table 10. switching off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 ma; v gs = 0 60 v i dss zero gate voltage drain current (vgs = 0) v ds = max rating 1 a v ds = max rating tc = 125 c 10 a i gss gate-body leakage current (vds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs ; i d = 250 a234v r ds(on) static drain-source on resistance v gs = 10v; i d = 40 a 8.5 10 m ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max ; i d = 40 a 19 38 s c iss input capacitance v ds = 25 v; f = 1 mhz; v gs = 0 7600 10000 pf c oss output capacitance 890 1100 pf c rss reverse transfer capacitance 150 200 pf symbol parameter test conditions min. typ. max. unit t d(on) turn-on time v dd = 30 v; i d = 40 a; r g = 4.7 ?; v gs = 10 v (see test circuit, figure 16) 50 65 ns t r rise time 150 200 ns q g total gate charge v dd = 48 v; i d = 80 a; v gs = 10 v 140 nc q gs gate-source charge 20 nc q gd gate-drain charge 50 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 48 v; i d = 40 a; r g = 4.7 ? v gs = 10 v (see test circuit, figure 18) 45 60 ns t r fall time 75 100 ns t c cross-over time 130 170 ns obsolete product(s) - obsolete product(s)
stb80ne06-10 4/10 table 11. source drain diode note: 1. pulse width limited by safe operating area 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % figure 3. safe operating area figure 4. thermal impedance figure 5. output characteristics figure 6. transfer characteristics symbol parameter test conditions min. typ. max. unit i sd source-drain current 80 a i sdm (1) source-drain current (pulsed) 320 a v sd (2) forward on voltage i sd = 80 a; v gs = 0 1.5 v t rr reverse recovery time i sd = 80 a; di/dt = 100 a/ s; v dd = 30 v; t j = 150 c( see test circuit, figure 18) 100 ns q rr reverse recovery charge 0.4 nc i rrm reverse recovery current 8 a obsolete product(s) - obsolete product(s)
5/10 stb80ne06-10 figure 7. transconductance figure 8. static drain-source on resistance figure 9. gate charge vs gate-source voltage figure 10. capacitance variations figure 11. normalized gate thresold voltage vs temperature figure 12. normalized on resistance vs temperature obsolete product(s) - obsolete product(s)
stb80ne06-10 6/10 figure 13. source-drain diode forward characteristics obsolete product(s) - obsolete product(s)
7/10 stb80ne06-10 figure 14. unclamped inductive load test circuit figure 15. unclamped inductive waveforms figure 16. switching time test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load swiching and diode recovery times obsolete product(s) - obsolete product(s)
stb80ne06-10 8/10 package mechanical table 12. to-263 (d 2 pak) mechanical data figure 19. to-263 (d 2 pak) package dimensions note: drawing is not to scale. symbol millimeters inches min typ max min typ max a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 4 3 obsolete product(s) - obsolete product(s)
9/10 stb80ne06-10 revision history table 13. revision history date revision description of changes february-1998 1 first issue 14-apr-2004 2 stylesheet update. no content change. obsolete product(s) - obsolete product(s)
stb80ne06-10 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com obsolete product(s) - obsolete product(s)
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